Type Designator: 2SC1000
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 55
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF: 10
Forward current transfer ratio (hFE), min: 300
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Type Designator: 2SC2240
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 3
Forward current transfer ratio (hFE), min: 200
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Type Designator: 2SA493
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 40
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.05
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 10
Forward current transfer ratio (hFE), min: 200
Noise Figure, dB: -
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Type Designator: 2SA970
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 4
Forward current transfer ratio (hFE), min: 200