I'm looking for a replacement for a complementary pair of transistors in a Marantz 1060. They are 2SC371 and 2SA562. The data substitution book has the replacement for 2SC371 as the 2SC1815, it lists the KSA992 as the complement to the 2SC1815. I have both of these on hand. I looked at the datasheet on the KSA992 versus the 2SA562. It looks okay in all categories except the Ic and Ie are lower on the KSA992. Anybody care to take a look and see what you think about this replacement. Thanks.
***********FOR the KSA992********
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE2 Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -50 mA
IB Base Current -10 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -120V, IE=0 -50 nA
ICEO Collector Cur-off Current VCE= -100V, IB=0 -1 μA
IEBO Emitter Cut-off Current VEB= -5mA, IC=0 -50 nA
hFE1
hFE2
DC Current Gain VCE= -6V, IC= -0.1mA
VCE= -6V, IC= -1mA
150
200
500
500 800
VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.61 -0.65 V
VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.09 -0.3 V
fT Current Gain Bandwidth Product VCE= -6V, IC= -1mA 50 100 MHz
Cob Output Capacitance VCB= -30V, IE=0, f=1MHz 2 3 pF
NV Noise Voltage VCE = -5.0V, IC = -1.0mA,
RG =100KW, GV = 80dB,
f = 10Hz to 1.0KHz
25 40 mV
**************FOR the 2SA562**********
Vcbo 30
VCeo 30
VEbo 5
Ic 400ma
Ie 400ma
Pc 300mw
Hfe 70 Min 400 Max
***********FOR the KSA992********
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE2 Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -50 mA
IB Base Current -10 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -120V, IE=0 -50 nA
ICEO Collector Cur-off Current VCE= -100V, IB=0 -1 μA
IEBO Emitter Cut-off Current VEB= -5mA, IC=0 -50 nA
hFE1
hFE2
DC Current Gain VCE= -6V, IC= -0.1mA
VCE= -6V, IC= -1mA
150
200
500
500 800
VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.61 -0.65 V
VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.09 -0.3 V
fT Current Gain Bandwidth Product VCE= -6V, IC= -1mA 50 100 MHz
Cob Output Capacitance VCB= -30V, IE=0, f=1MHz 2 3 pF
NV Noise Voltage VCE = -5.0V, IC = -1.0mA,
RG =100KW, GV = 80dB,
f = 10Hz to 1.0KHz
25 40 mV
**************FOR the 2SA562**********
Vcbo 30
VCeo 30
VEbo 5
Ic 400ma
Ie 400ma
Pc 300mw
Hfe 70 Min 400 Max