You want a higher voltage at the emitter then the collector for voltage gain?
Not necessarily, the potential or the voltage of the rail is only limiting voltage excursion of VAS stage and further...pre-drivers, drivers, outputs....in other words, it will dictate your maximal output power in the end. Think about P = (V*V)/R , which R in this case is the impedance of the load (speaker).
What matters here is that the voltage developed on R13 = Vbe of Q5 (VAS) + VR22 =~ 0.65V + VR22. It's obvious that changes in VR13 will lead to changes in VR22, even if Vbe of Q5 will also increase slightly once that current through R22 is increasing (caused by increased current in R13). Similarly, a decrease in current through R13 leads to a lesser current in R22 and a slightly less Vbe (but we are talking of mV here anyway, depending on the Q5 beta of Hfe).
In general, you must also take into account the power dissipated in the VAS transistor - once increasing the dissipation, Vbe will get lower. But here, since we are talking about cascoded VAS, there is no big change in power dissipation (this is also an "indirect" goal of the cascode).
You can take an arbitrary example....assume 1mA the current through R13...and calculate the VAS current (the one passing through R22). And then change the initial value of 1mA, up/down +/- 0.2mA....see where you get
Would not a ccs circuit be a better solution?
SV04 voltage will vary of course with current, but the current variation is anyway small to cause serious voltage variations. Temperature should not be a big concern here, as they are not placed near the heatsink to be affected....and anyway, if they are (and should be) close to the VAS device and the cascoding device, then temperature variation would be more or less the same in all elements involved - so no big change due to temperature. This is how I see it.
But, if you were thinking to replace kR35 for example (AU-D11-II sch) with a CCS, then yes, that would be an improvement because cascode voltage imposed by the SV04 will be more stiff related to voltage rail ripple.

In case you have such a multi-diode placed on output or driver transistors heatsink, then that's a different story because we are speaking of thermal feedback in that case (increasing temperature will lover the voltage in the multi-diode, which for this particular scenario is usually connected somewhere in input stage to adjust the bias tracking the heatsink temperature - STV diodes were used sometimes like this if I'm not wrong).
Hope I answered your questions.
Regards