ehc68 said:
Why the 0.6V difference between emitter and base?
Is there always supposed to be a 0.6v difference?
Yes, it is the 'keys to the kingdom"
Depending upon the actual transistor die, it will start to turn on around 0.6 volts and then after that a small change in voltage (and base current) will cause a larger change in the collector to emitter current.
That's when all those graphs in the transistor's data sheet start to come into play...
Gain of the transistor is a ratio of the collector to emitter current versus the base to emitter current. Of course the total emitter current is a total of the base and collector currents.
http://www.bcae1.com/trnsistr.htm is an informative web page...
after you are done with that page, the stuff below will make a great deal of sense....
2x 2sd667 (Q1,Q2) 120v, 1 amp, 0.9 watt 140mhz npn transistor with ECB layout
2x 2sd756 (Q7,Q9) 120v, 0.05 amp, 0.75 watt 350mhz npn transistor with ECB layout
1x 2sb716 (Q3,Q4,Q8,Q10) 120v, 0.05 amp, 0.75 watt 150mhz PNP transistor with ECB layout
volts is maximum volts collector to emitter (when turned off)
amps is maximum collector current (when turned all the way on)
watts is maximum heat dissapation (collector current x volts across collector to emitter)
mhz is the (maximum) speed at which the transistor's gain is one....
gain I didn't list, power transistors (higher collector currents) generally have lower gains...